Dr. Zhi Chen's Group
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Research  Projects

NANO-SCALE GATE INSULATORS FOR MOS DEVICES

MOS DEVICE RELIABILITY

NANO STRUCTURE MATERIALS

NANOTUBE FIELD-EFFECT TRANSISTORS

INTEGRATED SENSORS

 

Research Update

New Effect: 10,000-100,000 Times Reduction of Gate Leakage Current of Silicon Oxide/Oxynitride

We discovered and harnessed a new effect, phonon-energy coupling enhancement (PECE)—an increase in bond energy coupling through the manipulation of silicon, oxygen, and deuterium vibrational modes undergoing rapid thermal process (RTP) and deuterium anneal, so that Si-O and Si-D bonds become more robust. This results in dramatical reduction of gate leakage current of silicon oxides and oxynitrides by 4-5orders of magnitude, equivalent to that of high-k gate oxides. This will allow chip producers to develop faster chips with reduced power consumption by extending the current mainstream silicon oxide/oxynitride technology. [2005 International Semiconductor Device Research Symposium (ISDRS), IEEE, Dec. 7-9, 2005. (PDF) and Appl. Phys. Lett. vol. 88, no. 8, 082905, Feb. 20, 2006. (PDF)]

We found that the origin of the H/D isotope effect is the energy coupling from the Si-D bending mode to two vibrational modes, i.e. Si-O TO mode and the Si-Si TO phonon mode (Appl. Phys. Lett. vol. 83, no. 11, 2151-2153, Sept. 15, 2003). We were the first to find the energy coupling to Si-O mode, which might open a new pathway for further improvement of the hot-electron related MOS transistor lifetime.

Traditionally carbon nanotubes were manipulated by STM and AFM with very low yield. We successfully demonstrated the alignment of a single bundle of single-wall nanotubes across two electrodes using AC electric field (J. Vac. Sci. Technol. B, vol. 22, no. 2, pp. 776-780, 2004). This may pave the way for manipulation of nanotubes with high yield.

In 2003, we have received three research grants from National Science Foundation  Nanoscale Exploratory Research (NER) program, Nanoscale Undergraduate Education (NUE), and Department of Energy EPSCoR program.

In 2004, we have received two new research grants from Department of Energy and Army Research Laboratory.

In 2005, as Principal Investigator, Dr. Chen received $2.8M from NSF and Kentucky State EPSCoR Infrastructure Program.

In 2006, as Principal Investigator, Dr. Chen received $1.2M from NSF Nanoscale Interdisciplinary Research Team (NIRT) program.


Nano-scale Gate Insulators for MOS Devices

MOS Device Reliability 

Hot Carrier Degradation and Its Hydrogen/Deuterium (H/D) Isotope effect 
  • Probing hot-carrier degradation mechanisms of MOS devices using the H/D isotope effect 
  • Deuterium processing of MOS devices
  • Gate oxide reliability 
Degradation physics of the SiO2/Si interface and the origin of the H/D isotope effect
    Study of Si-H and Si-D bonds using Fourier Transform Infrared (FTIR) spectrometry

2-D Anodic Aluminum Oxide (AAO) Array Nanostructures


1-D Anodic Aluminum Oxide (AAO) Array Nanostructures



 

Nanotube Field-Effect Transistors



Integrated Sensors

Carbon nanotube-based gas sensors

Hydrogen sensors