PUBLICATIONS
BOOKS/BOOK CHAPTERS
Shibin Li and Zhi Chen, “Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO2 on silicon,” in Dielectrics for nanosystem 4: Materials Science, Processing, Reliability, and Manufacturing, ECS Transactions, vol. 28, issue 2, edited D. Misra, D. Bauza, Z. Chen, T. Chikyow, H. Iwai, and Y. Obeng, the Electrochemical Society, pp 89-95 (2010). (Invited)

Zhi Chen, Jun Guo, Chandan B. Samantaray, and Pangleen Ong, “A New Physics Effect, Phonon-Energy-Coupling Enhancement, and Its Applications for Leakage Current Reduction of Gate Dielectrics,” in Dielectrics for nanosystem 3: Materials Science, Processing, Reliability, and Manufacturing, ECS Transactions, vol. 13, issue 2, edited D. Misra, the Electrochemical Society, pp 189-198 (2008). (Invited)

C. Lu and Z. Chen, “Anodic Aluminum Oxide Templates,” in Encyclopedia of Nanoscience and Nanotechnology, vol. 11, edited H. S. Nalwa, American Scientific Publishers, Stevenson Ranch, CA, pp 235-259 (2011) (Invited) (PDF)


Z. Chen, “Nanotubes for Nanoelectronics,” in Encyclopedia of Nanoscience and Nanotechnology, edited H. S. Nalwa, American Scientific Publishers, Stevenson Ranch, CA, 2004, pp. 919-942. (Invited) (PDF)
JOURNAL PUBLICATIONS

Peer Reviewed Journals

  1. Zhi Chen, Pang-Leen Ong, Yichun Wang, and Lei Han, “Lateral heating of SiO2/Si: Interfacial Si structure change causing tunneling current reduction,” Appl. Phys. Lett. 100, 171602 (2012).
  2. Chi Lu, Zhi Chen, and Ping Yu, “A novel reaction model for the electrical conductivity of ultra-thin TiO2 films in H2,” Physical Chemistry Chemical Physics 13, no. 20, 9131-9133 (2011).
  3. Chi Lu and Zhi Chen, “MOS hydrogen sensor with very fast response based on ulitra-thin thermal SiO2 film,” Int. J. Hydrogen Energy 35,  no. 22, 12561-12567  (2010). 
  4. Shibin Li, Lei Han, and Zhi Chen, “The Interfacial Quality of HfO2 on Silicon with Different Thicknesses of the Chemical Oxide Interfacial Layer,” J. Electrochem. Soc. 157, G221-G224 (2010).
  5. Chi Lu, Zhi Chen, and Vijay Singh, “Highly hydrogen-sensitive SnO2 nanoscale-particle films with platinum electrodes,” Sensors and Actuators B 146, 145-153 (2010).
  6. Piao Liu, Vijay P. Singh, Suresh Rajaputra, Sovannary Phok, and Zhi Chen, “Characteristics of copper indium diselenide nanowires embedded in porous alumina templates,”  J. Mater. Res. 25, 207-212 (2010).
  7. Zhi Chen, Pang-Leen Ong, and Yichun Wang, “Reliable Observation of Large Leakage-Current Reduction of Thin SiO2 Induced by Phonon-Energy-Coupling Enhancement: Problems and Solution,” J. Electrochem. Soc. 157, G44-G48 (2010).
  8. Chi Lu and Zhi Chen, “High-Temperature Resistive Hydrogen Sensor Based on Thin Nanoporous Rutile TiO2 Film on Anodic Aluminum Oxide,” Sensors and Actuators B 140, 109–115 (2009).
  9. T. X. Li, K. Kuwana, K. Saito, H. Zhang, Z. Chen, “Temperature and carbon source effects on methane–air flame synthesis of CNTs,” Proceedings of the Combustion Institute, vol. 32, 1855–1861 (2009).
  10. Pang-Leen Onga, Zhi Chen, Amr Haggag, and Tien-Ying Luo, “Large Leakage-Current Reduction of Ultrathin Industrial SiON Wafers Induced by Phonon-Energy-Coupling Enhancement,” Electrochem. Solid-State Lett., vol. 11, no. 11, H293-H295  (2008).
  11. Rui Zhu, Hongguo Zhang, Zhi Chen, Sergiy Kryukov, and Lance DeLong, “Horizontally Aligned Single Array of Co Nanowires Fabricated in One-Dimensional Nanopore Array Template,”  Electrochem. Solid-State Lett., vol.11, K57-K60 (2008)
  12. Zhi Chen, “Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon,” Appl. Phys. Lett., vol. 91, 223513 (2007).
  13. Dongyan Ding and Zhi Chen, “Pyrolytic Carbon-Stabilized Nanoporous Palladium Film for Wide-Range Hydrogen Sensing,” Adv. Mater., vol. 19, 1996–1999 (2007).
  14. Pangleen Ong and Zhi Chen, “Evidence of enhanced phonon-energy coupling in SiO2/Si,” Appl. Phys. Lett. 90, 113516 (2007).
  15. Dongyan Ding, Zhi Chen, Suresh Rajaputra and Vijay Singh, “Hydrogen sensors based on aligned carbon nanotubes in anodic aluminum oxide template with palladium as top electrodes,”  Sensors & Actuators B, vol. 124, 12-17 (2007).
  16. T.X. Li, H.G. Zhang, F.J. Wang, Z. Chen, and K. Saito, “Synthesis of carbon nanotubes on Ni-alloy and Si-substrates using counterflow methane–air diffusion flames,” Proceedings of the Combustion Institute, vol. 31, 1849-1856 (2007). (PDF)
  17. Hongguo Zhang and Zhi Chen, “A Horizontally Aligned One-Dimensional Carbon Nanotube Array on a Si Substrate,” J. Electrochem. Soc., vol. 154, H124-H126 (2007).  
  18.  Chi Lu, Zhi Chen, and Kozo Saito, “Hydrogen sensors based on Ni/SiO2/Si MOS capacitor,” Sensors & Actuators B, vol. 122, 556-229 (2007).  
  19. Chandan. B. Samantaray and Zhi Chen, “Reduction of Gate Leakage Current of HfSiON Dielectrics through Enhanced Phonon-Energy Coupling,” Appl. Phys. Lett., vol. 89, 162903 (2006). (PDF)
  20. Dongyan Ding and Zhi Chen, “Volume-Expansion-Enhanced Pinning of Nanoporous Pd Films for Detection of High-Concentration Hydrogen,” Sensor Letters, vol. 4, 331-333 (2006).
  21. Dongyan Ding, Zhi Chen, and Chi Lu, “Hydrogen sensing of nanoporous palladium films supported by anodic aluminum oxides,” Sensors & Actuators B, vol. 120, 182-186 (2006).
  22. Z. Chen and J. Guo, “Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification,” Solid-State Electronics, vol. 50, 1004–1011  (2006). (PDF)
  23. Z. Chen, J. Guo, and F. Yang, “Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO2/Si system,” Appl. Phys. Lett. vol. 88, no. 8, 082905, Feb. 20, 2006. (PDF)
  24. Z. Chen and C. Lu, “Humidity sensors: a review of materials and mechanisms,” Sensor Letters vol. 3, 274–295, 2005. (Invited) (PDF)
  25. Z. Chen and H. Zhang, “Mechanisms for formation of a one-dimensional array of nanopores by anodic oxidation,” J. Electrochem. Soc. vol. 152,  no. 12, D227-D231 (2005). (PDF)
  26. H. Zhang, Z. Chen, T. Li, and K. Saito, “Fabrication of a one-dimensional array of nanopores on a silicon substrate,” J. Nanosci. & Nanotechnol. vol. 5, pp. 1745–1748, 2005. (PDF)
  27. Z. Chen, W. Hu, J. Guo and K. Saito, “Fabrication of nanoelectrodes based on controlled placement of carbon nanotubes using alternating-current electric field,” J. Vac. Sci. Technol. B, vol. 22, no. 2, pp. 776-780, 2004. (PDF)
  28. Z. Chen, J. Guo, and P. Ong, “Evidence for Energy Coupling from the Si-D Vibration Mode to the Si-Si and Si-O Vibration Modes at the SiO2/Si Interface,” Appl. Phys. Lett. vol. 83, no. 11, pp. 2151-2153, 2003. (PDF)
  29. Z. Chen, P. Ong, A. K. Mylin, V. Singh, and S. Chetlur, “Direct Evidence of Multiple Vibrational Excitation for the Si-H/D Bond Breaking in Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett. vol. 81, pp. 3278-3280, 2002. (PDF)
  30. W. C. Hu, L. M. Yuan, Z. Chen, D. W. Gong, and K. Saito, “Fabrication and Characterization of Vertically Aligned Carbon Nanotubes on Silicon Substrates Using Porous Alumina Nanotemplates,” J. Nanosci. and Nanotechnol., vol. 2, pp. 203-207, 2002. (PDF)
  31. W. C. Hu, D. W. Gong, Z. Chen, L. M. Yuan, K. Saito, P. Kichambare and C. A. Grimes, “Growth of well-aligned carbon nanotube arrays on silicon substrate using porous alumina film as nano-template,” Appl. Phys. Lett. vol. 79, pp. 3083-3085, 2001. (PDF)
  32. D. W. Gong, C. A. Grimes, R. S. Singh, O. K. Varghese, Z. Chen, W. C. Hu  and E. C. Dickey, “Titanium Oxide Nanotube Arrays Prepared By Anodic Oxidation,” J. Mater. Res. vol. 16, pp. 3331-3334, 2001. (PDF)
  33. L. Yuan, K. Saito, W. Hu and Z. Chen, “Ethylene flame Synthesis of well-aligned multi-walled carbon nanotubes,” Chem. Phys. Lett. Vol. 346, pp. 23-28, 2001. (PDF)
  34. Z. Chen and D. Gong, “Physical and electrical properties of Si3N4/Si/GaAs metal-insulator-semiconductor structure,” J. Appl. Phys., vol. 90, pp. 4205-4210, 2001. (PDF)
  35. K. Cheng, J. Lee, Z. Chen, S. Shah, K. Hess, J. W. Lyding, Y.-K. Kim, Y.-W. Kim, K. P. Suh, “Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices,” Microelectronic Engr., vol. 56, pp. 353-358, 2001. (PDF)
  36. K. Cheng, J. Lee, Z. Chen, S. Shah, K. Hess, J.-P. Leburton, and J. W. Lyding, “Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultra-high vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices,” J. Vac. Sci. Technol., vol. B 19, pp. 1119-1123, 2001. (PDF)
  37. Z. Chen, P. Garg, V. J. Singh, and S. Chetlur, “Role of Holes in the Isotope Effect and Mechanisms for the MOS Device Degradation,” Appl. Phys. Lett., vol. 79, pp. 212-214, 2001. (PDF)
  38. Z. Chen, K. Cheng, J. Lee, K. Hess, J. W. Lyding, and S. Chetlur, “Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study,” IEEE Trans. Electron Dev., vol. 48, no. 4, pp. 813-815, 2001. (PDF)
  39. Z. Chen, K. Hess, J. Lee, J. W. Lyding, E. Rosenbaum, I. Kizilyalli, S. Chetlur, and R. Huang, “On  the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing,” IEEE Electron. Dev. Lett., vol. 21, no. 1, pp. 24-26, Jan. 2000. (PDF)
  40. J. Lee, K. Cheng, Z. Chen, K. Hess, J. W. Lyding, Y.-K. Kim, H.-S. Lee, Y.-W. Kim, and K.-P. Suh, “Application of high pressure deuterium annealing for improving the hot-carrier reliability of CMOS transistors,” IEEE Electron. Dev. Lett., vol. 21, no. 5, pp. 221-223, Jan. 2000.
  41. K. Hess, J. Lee , Z. Chen , J. W. Lyding, Y. K. Kim, B. S. Kim, Y. H. Lee, Y. W. Kim, and K. P. Suh, “An alternative interpretation of hot electron interface degradation in NMOSFETs: Isotope results irreconcilable with major defect generation by holes?” IEEE Trans. Electron. Dev., vol. 46, pp. 1914-1916, 1999.
  42. Z. Wang, D. M. Diatezua, D. G. Park, Z. Chen, H. Morkoc, A. Rockett, “Plasma nitridation of thin Si layers for GaAs dielectrics,” J. Vac. Sci. Technol. B,  Vol.17, pp. 2034-2039, Sept-Oct 1999.
  43. I. C. Kizilyalli, G. Abeln, Z. Chen, G. Webber, B. Kozias, S. Chetlur, J. W. Lyding, and K. Hess, “Improvement of hot carrier reliability with deuterium anneals for manufacturing multi-level metal/dielectrics MOS system,” IEEE Electron. Dev. Lett., vol. 19, pp. 444-446, 1998.
  44. J. W. Lyding, K. Hess, G. C. Abeln, D. S. Thompson, J. S. Moore, M. C. Hersam, E. T. Foley, J. Lee, Z. Chen, S.-T. Hwang, H. Choi, Ph. Avouris, and I. C. Kiziyalli, "UHV-STM nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for CMOS technology," Appl. Surf. Sci., vol.132, pp. 221-230 (1998).
  45. D. M. Diatezua, Z. Wang , D. Park, Z. Chen , A. Rockett , H. Morkoc, “Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure,” J. Vac. Sci. Tech. B, vol. 16, pp. 507-510, March-April 1998.
  46. Z. Chen and S. N. Mohammad, “GaAs metal-insulator-semiconductor structure and field-effect transistors grown by ex-situ  approach,” Electron. Lett., vol. 33, pp. 1906-1907, 1997.
  47. Z. Chen, S. N. Mohammad, H. Morkoç, and Y. C. Chang, “On the inversion in GaAs metal-insulator-semiconductor heterostructures,” Appl. Phys. Letts., vol. 70, pp. 228-230, 1997.
  48. Z. Chen, D.-G. Park, S. N. Mohammad, D. M. Diatezua, H. Morkoç, and Y. C. Chang, “Band structure and the confined energy levels of the Si3N4/Si/GaAs system,” J. Appl. Phys., vol. 82, pp. 275-580, 1997. (PDF)
  49. D.-G. Park, Z. Chen, D. M. Diatezua, Z. Wang, A. Rockett, and H. Morkoç, and S.A. Alterovitz, “Thermal stability of Si3N4/Si/GaAs interfaces,” Appl. Phys. Lett. vol. 70 , pp. 1263-1265, 1997.
  50. D.-G. Park, Z. Chen, and H. Morkoç, “Characteristics of Si3N4/GaAs Metal-Insulator Semiconductor Interfaces with Coherent Si/Al0.3Ga0.7As Interlayers,” J. Electron. Mater., vol. 26, pp. 1076-1082, 1997.
  51. D. G. Park, Z. Chen, S. N. Mohammad, and H. Morkoç, “Metal-insulator-semiconductor structure on GaAs using pseudomorphic Si/GaP interlayer,” J. Vac. Sci. and Technol. B,  vol. 15, pp. 252-258, 1997.
  52. Z. Chen, D. Park, S. N. Mohammad, and H. Morkoç, “Metal-insulator-semiconductor structures on p-type GaAs with low interface state density”,  Appl. Phys. Letts., vol. 69, pp. 230-232, 1996. (PDF)
  53. Z. Chen, S. N. Mohammad, and H. Morkoç, “Band structure of Al/Si/n-GaAs with a strained Si interfacial layer,” Phy. Rev. B. , vol. 53, pp. 3879-3854, 1996.
  54. D.-G. Park, D. M. Diatezua, Z. Chen, S. N. Mohammad, and H. Morkoç, “Characteristics of Si3N4/Si/n-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate,” Appl. Phys. Letts., vol. 69, pp. 3025-3027, 1996.
  55. D. Park, Z. Chen, A. E. Botchkarev, S. N. Mohammad, and H. Morkoç, “Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structure using Si interlayer,” Philosophical Magazine B, vol. 74, pp. 219-234, 1996.
  56. Z. Chen, W. Kim, A. Salvador, S. N. Mohammad, O. Aktas, and H. Morkoç, “Schottky barriers on anodic-sulfide-passivated GaAs and their stability,”  J. Appl.Phys., vol.78, pp. 3920-3924, 1995.
  57. Z. Chen and M.-C. Jin, “Effect of high substrate temperatures on crystalline growth of Al2O3 films deposited by reactive evaporation,” J. Mater. Sci. Lett., vol. 11, pp. 1023-1025, 1992.
  58. Z. Chen, M.-C. Jin, C. Zhen, and G.-H. Chen, “Properties of modified anodic-spark-deposited alumina porous ceramic films as humidity sensors,” J. Am. Ceram. Soc., vol. 74, pp. 1325-1330, 1991.
  59. Z. Chen, M.-C. Jin, and C. Zhen, “Humidity sensors with reactively evaporated Al2O3 films as porous dielectrics,” Sensors and Actuators, vol. B2, pp. 167-171, 1990.
  60. Z. Chen, K. Yang and J. Wang, “Preparation of indium tin oxide films by vacuum evaporation", Thin Solid Films, Vol. 162, 305-313 (1988).
  61. Z. Chen and M.-C. Jin, "Preparation of humidity-sensitive Al2O3 films by vacuum evaporation,” Thin Film Sci. & Technol. (China), vol. 3, 52-55, 1990.
  62. M.-C. Jin and Z. Chen, "The linearity of quadrupole mass spectrometers near the upper limit", Vacuum Sci. & Technol. (China), vol. 10, pp. 134-139, 1990.
  63. Z. Chen and K. Yang, “The chemical process of evaporative deposition of high quality ITO films,” Vacuum Sci. & Technol. (China), vol. 10, pp. 134-139, 1990.

 
 

PROCEEDINGS

Peer Reviewed Conference Paper

  1. Zhi Chen, “Origin of Tunneling Current Reduction and Phonon-Energy Coupling Enhancement in the SiO2/Si System,” The 12th International Union of Materials Research Societies (IUMRS) Conference in Asia, Taipei, Taiwan, Sept. 19-22, 2011. (Invited)
  2. Jun Fang, Youngsik Song and Zhi Chen, “Nanoimprinted SU-8 Nanopillars and Hierarchically Branched Nanowires by Anodic Aluminum Oxide Templates and Their Optical Properties,” Proceedings of 2010 IEEE University Government Industry Micro/Nano Symposium (UGIM 2010), Purdue University, West Lafayette, Indiana, June 28 – July 1, 2010 (CD version).
  3. Shibin Li and Zhi Chen, “Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO2 on silicon,” in Dielectrics for nanosystem 4: Materials Science, Processing, Reliability, and Manufacturing, ECS Transactions, vol. 28, issue 2, edited D. Misra, D. Bauza, Z. Chen, T. Chikyow, H. Iwai, and Y. Obeng, the Electrochemical Society, pp 89-95 (2010). (Invited)
  4. Youngsik Song, Jun Fang, and Zhi Chen, “One-Dimensional Molecular-Junction Arrays Fabricated Using Anodic Aluminum Oxide Templates", Electrochemical Engineering for the 21st Century, the 217th Meeting of The Electrochemical Society, Inc., Vancouver, Canada, April 25-30, 2010.
  5. Zhi Chen and Shibin Li, “Effect of thickness of the chemical oxide interfacial layer on the interfacial quality of HfO2 on silicon,” the 40th IEEE Semiconductor Interface Specialists Conference, Arlington, VA, December 3-5, 2009.
  6. Zhi Chen, Pangleen Ong, and Chaoyuan M. Liu, “Understanding a New Effect: Correlation between Phonon-Energy-Coupling Enhancement and the Energy-Band-Structure Change of the SiO2/Si System,” Proceedings of the 2nd International Multi-Conference on Engineering and Technological Innovation (IMETI 2009), July 10-13, 2009, Orlando, Florida, USA, pp. 255-257.
  7. Zhi Chen and Pangleen Ong, “Correlation between Phonon-Energy-Coupling Enhancement and the Energy-Band-Structure Change of the SiO2/Si System”, Conference Abstracts, 39th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, December 11-13, 2008.
  8. Pang-Leen Ong and Zhi Chen, “A New Fabrication Procedure for Reproducibly Observing Leakage Current Reduction of SiO2 due to Enhanced Phonon-Energy Coupling,” Proc. 17th Biennial IEEE University Government Industry Micro/nano Symposium, Louisville, KY, July 13-16, 2008, pp. 53-57.
  9. Zhi Chen, Chandan B. Samantaray, and Pangleen Ong, “Correlation between Phonon-Energy Coupling Enhancement and Leakage Current Reduction of HfSiON,” Proc. 4th International Symposium on Advanced Gate Stack Technology, Dallas, Texas, Sept. 26-28, 2007, p.S4-3.
  10. Zhi Chen, Jun Guo, and Pangleen Ong, “Fundamental Mechanisms for Reduction of Leakage Current of Silicon Oxide and Oxynitride through RTP-Induced Phonon-Energy Coupling,” 14th Annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto, Japan, October 10-13, 2006, pp. 111-115 (Invited).
  11. Dongyan Ding and Zhi Chen, “Nanoporous Pd Film Sensors for Detection of High Concentration Hydrogen,” the 6th IEEE Conference on Nanotechnology, Cincinnati, OH, July 16-20, 2006.
  12. Hongguo Zhang and Zhi Chen, “Growth of Horizontally Aligned One-Dimensional Carbon Nanotubes Array on a Si Substrate,” the 6th IEEE Conference on NanotechnologyCincinnati, OH, July 16-20, 2006.
  13. Dongyan Ding and Zhi Chen, “Detecting high concentration hydrogen with nanoporous palladium supported by anodic aluminum oxides,” the 64th Device Research Conference, IEEE, University Park, PA, June 26-28, 2006. pp. 127-128.
  14. Pang-Leen Ong, Chandan Samantaray, and Zhi Chen, “Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement,” the 64th Device Research Conference, IEEE, University Park, PA, June 26-28, 2006. pp. 79-80.
  15.  Zhi Chen and Jun Guo, “Phonon Energy Coupling Enhancement: Dramatic Improvement of the Reliability of Silicon MOS Transistors,” Proc. 2006 International Reliability Physics Symposium, IEEE, San Jose, CA, March 26-30, 2006, pp. 739-740.
  16. Zhi Chen, Jun Guo and Chandan B. Samantaray, “Dramatic Reduction of Gate Leakage Current of Ultrathin Oxides through Oxide Structure Modification,” 2005 International Semiconductor Device Research Symposium (ISDRS), IEEE, Dec. 7-9, 2005.
  17. Zhi Chen and Jun Guo, “Dramatic Enhancement of Phonon Energy Coupling at the SiO2/Si Interface Due to Rapid Thermal Processing of the Gate Oxide”, Proc. of  35th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 9-11, 2004.
  18. Z. Chen, J. Guo, and P. Ong, “Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices,” in Hydrogen in Semiconductors, edited by Norbert H. Nickel, Matthew D. McCluskey, and Shengbai Zhang, Materials Research Society (MRS) Symposium Proceedings, vol. 813, Symposium H, MRS, Warrendale, Pennsylvania, 2004.
  19. Z. Chen, P. Garg, and A. P. Ong, “Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing,” Proc. of the 2003 IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, Dec. 16-18, 2003, pp. 197-199.
  20. Z. Chen, J. Guo, and P. Ong, “Direct Evidence for the Origin of the H/D Isotope Effect of Hot-Electron Degradation of MOS Devices,” Proc. of  34th IEEE Semiconductor Interface Specialists Conference, Washington, DC, Dec. 4-6, 2003, pp. S4.2.
  21. Z. Chen and P. Ong, “Direct Evidence for Multiple Vibrational Excitation of Si-H/D Bonds for Hot-Carrier Degradation of MOS Transistors,” in Proc. of the 60th Annual Device Research Conference, IEEE Electron Device Soc., Santa Barbara, CA, June 24-26, 2002, pp. 189-190.
  22. Z. Chen, W. C. Hu, D. W. Gong, L. M. Yuan, K. Saito, “Fabrication of Self-Organized Carbon Nanotubes on Si Substrates Using Nano-Template by Flame Synthesis Technique,” in Proc. of 2001 International Semiconductor Device Research Symposium (ISDRS’01), Washington, DC, Dec. 5-7, 2001, pp. 314-317.
  23. L. Yuan, K. Saito, W. Hu, and Z. Chen, “Multi-walled carbon nanotubes from ethylene diffusion flames,” in Proc.  of the 6th Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001), 2001, pp. 810-813.
  24. Z. Chen, P. Garg, V. Singh, and S. Chetlur, “Role of holes in the isotope effect and mechanisms for the MOS device degradation,” in Proc. of the Electrochemical Soc. (ECS) International Semiconductor Technology Conference, Shanghai, China, May 27-30, 2001, pp.458-462 .
  25. Z. Chen, K. Hess, J. Lee, J. W. Lyding, E. Rosenbaum, I. Kizilyalli and S. Chetlur, “Mechanism for hot carrier-induced interface trap generation in MOS transistors,” in IEEE Int. Electron Dev. Meet. (IEDM) Tech. Dig., 1999, pp. 85-88.
  26. Z. Chen, J. Lee, and J. W. Lyding, “Alternative Approach for Modeling the Hot Carrier Degradation of SiO2/Si Interface,” in Hydrogen in Semiconductor and Metals, Materials Research Society (MRS) Symposium Proceedings, vol. 513, MRS, Warrendale, Pennsylvania, 1998, pp. 313-317.
  27. J. Lee, Z. Chen, E. Foley, K. Cheng, K. Hess, J. W. Lyding, S. Lee, K. Huh, J. Park, and Y. Lee, “Temperature Dependence of Deuterium Isotope Effect in Dominant Mechanisms of Hot Carrier Degradation,” presented at the 29th IEEE Semiconductor Interface Specialist Conference (SISC), San Diago, CA, Dec. 3-5, 1998.
  28. I. C. Kizilyalli, G. Abeln, Z. Chen, G. Webber, F. Register, E. Harris, J. W. Lyding, and K. Hess, “Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability,” in IEEE Int. Electron Dev. Meet. (IEDM) Tech. Dig., 1998, pp. 935-938.
  29. Z. Chen, J. Lee, J. W. Lyding, and K. Hess, “Deuterium processing of CMOS devices: New phenomena and dramatic improvement,”  in 1998 IEEE Symposium on VLSI Technology, Digest of Technical Papers, June 1998, pp. 180-181.
  30. I. C. Kizilyalli, G. C. Abeln, Z. Chen, G. Webber, F. Register, E. Harris, S. Chetlur, G. Higashi, M. Schofield, S. Sen, B. Kotzias, P. K. Roy, J. W. Lyding, and K. Hess, “Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability,” in Proc. of SPIE Microelectronic Manufacturing, Microelectronic Device Technology II, Sept. 1998, pp. 141-146.
  31. J. W. Lyding, K. Hess, G. C. Abeln, E. T. Foley, J. Lee, Z. Chen, I. C. Kizilyalli, and Ph. Avouris, “UHV-STM nanofabrication and semiconductor interface characterization: transistion to CMOS technology,” in Proc. of International Conference on Solid State Devices and Materials, Hamamatsu, Japan, Sept. 16-19, 1997, pp. 220-221 (invited).
  32. Z. Chen and M.-C. Jin, “An alpha-alumina moisture sensor for relative and absolute humidity measurement,” in Proc. of the 27th annual conference of IEEE  Industry Application Soc., Houston, Texas, USA, Oct. 1992, vol. 2, pp1668-1675 (The Second Prize Paper Award).
  33. M.-C. Jin, Z. Chen, C. Zhen, and G.-H. Chen, “Preparation of alpha-alumina porous humidity-sensitive films by anodic spark deposition,” in Proc. of the 3rd National Symposium on Humidity and Moisture, Iner-Mongolia, China, Aug. 20-26, 1990, pp29-33.
  34. Z. Chen, “Characteristics of transparent and conductive ITO films deposited by vacuum evaporation,” in Proc. of the 1st Youth Symp. on Mater. Sci., Shengyang, Liaoning, China, Oct. 1987, pp89-90.

 

Conference Presentations/Abstracts
  1. Chi Lu, Young-Sik Song, and Zhi Chen, “Investigation of Hydrogen Sensing Properties of Rutile-Phased Titanium Oxide Nanotube Thick Layer,” Poster Presentation, 14th Annual Kentucky EPSCOR Conference, Oct. 3, 2008, Louisville, KY.
  2. Zhi Chen, Pangleen Ong, and Chandan B. Samantaray, “Large Leakage Current Reduction of Silicon Oxide and High-K Oxides Using the Phonon-Energy-Coupling Enhancement Effect,” presented at 2007 International Semiconductor Device Research Symposium, Dec. 12-14, 2007, College Park, MD, USA.
  3. Zhi Chen, Rui Zhu, and Hongguo Zhang, “Novel One-Dimentional Anodic Aluminum Oxide Array Template: Applications for Nanowire and Nanotube Array Growth,” presented at the 2007 Nanoelectronic Devices for Defense & Security (NANO-DDS) Conference, Crystal City, Virginia, June 18 -21, 2007.
  4. Z. Chen, R. Zhu and H. Zhang, “Novel One-Dimentional Anodic Aluminum Oxide Array Template: Applications for Nanowire and Nanotube Array Growth,” presented at the 212th Electrochemical Society Meeting, Abstract # 1362, Washington, DC, Oct. 7 -12, 2007.
  5. H. G. Zhang, Z. Chen, T. X. Li, and K. Saito, “Fabrication of 1-D AAO Nano-Pore Arrays on Si Substrates”, 2005 KY Innovation & Enterprise Conference, Louisville, KY, March 30, 2005.
  6. H. G. Zhang, Z. Chen, T. X. Li, and K. Saito, “Fabrication of Quasi 1-D AAO Nano-Pore Arrays on Si Substrates”, 11th Annual Kentucky Statewide EPSCoR Conference, Louisville, KY, May 13, 2005.
  7. H. Zhang, Z. Chen, T. Li, and K. Saito, “Fabrication of Quasi 1-D AAO Nano-Pore Arrays on Si Substrates”, Conference of Kentucky Science & Engineering Foundation, Louisville KY, March 3, 2004. 
  8. H. Zhang, Z. Chen, T. Li, and K. Saito, “Fabrication of Quasi 1-D AAO Nano-Pore Arrays on Si Substrates”, 10th Annual Kentucky Statewide EPSCoR Conference, May 13, 2004.
  9. Z. Chen, J. Guo, and S. McVay, “Electrical Properties of a Single-walled Carbon Nanotube Bundle Controllably Placed on Metal Electrodes Using an Alternating-Current Electric Field,” 10th Annual Kentucky Statewide EPSCoR Conference, May 13, 2004.
  10. H. Zhang, Z. Chen, T. Li, and K. Saito, “Fabrication of a 1-D AAO Nano-Pore Array on a Si Substrate”, 2004 International Workshop on Nanomaterials, Lexington, KY, Sept. 2004
  11. Z. Chen, W. C. Hu, D. W. Gong, L. M. Yuan, K. Saito, P. Kichambare and C. A. Grimes, “Growth of well-aligned carbon nanotube arrays on silicon substrate using porous alumina film as nano-template,” 2001 Materials Research Society Fall Meeting .
  12. D. W. Gong, C. A. Grimes, S. Singh, Z. Chen, “Observation of titanium oxide nanotube-like arrays prepared by anodic oxidation,” 2001 Materials Research Society Fall Meeting.
  13. D. G. Park, D. M. Dieatezua, Z. Chen, S. N. Mohammad, and H. Morkoç, “Interface properties of Si3N4/Si/GaAs(111B) substrate,” presented at 1996 Materials Research Soc. Fall Meeting, Boston MA, Nov. 1996.
  14. D. G. Park, D. M. Dieatezua, Z. Chen, S. N. Mohammad, and H. Morkoç, “Interface degradation of Si3N4/Si/GaAs structure with high temperature annealing”, presented at 1996 MRS Fall Meeting, Boston MA, Nov. 1996.
  15. Z. Chen, M.-C. Jin, and G.-J. Li, “Properties of alumina films prepared by reactive evaporation at high substrate temperatures,” presented at the Int. Symp. on Vacuum Sci., Thin Films, and Surf. Sci., Chinese Vacuum Soc. and Amer. Vacuum Soc., Wuxi, Jiangshu, China, Sept. 16-18, 1991.

 
 

PATENTS
Zhi Chen and Ibrahim Yucedag, “Moisture Sensors on Conductive Substrates,” US Patent Application, March 9, 2012.

Zhi Chen and Ibrahim Yucedag, “Design of Mechanical Electrodes for Alpha-Al2O3 Moisture Sensors Based on Aluminum Substrates,” US Provisional Patent Application, April 22, 2011.

Zhi Chen, “Method for reducing the leakage current of gate dielectrics of metal-oxide-semiconductor transistors,” US Patent Application S.N. 61/192,944, Sept. 23, 2008.

Zhi Chen and Jun Guo, “A method for fabricating gate insulators of semiconductor transistors,” Chinese Patent Application No. 200810174722.3, 2008.
 

Zhi Chen and Jun Guo, “Method for fabricating gate dielectrics of metal-oxide-semiconductor transistors using rapid thermal processing,” US Patent Application S.N. 11/977,258, Oct. 24, 2007.


Zhi Chen, “Method to fabricate an ultra-short channel (sub-10 nm) Si metal-oxide-semiconductor field-effect transistors using single wall carbon nanotubes as shadow masks,” US Patent Application S.N. 60/388,638, May 5, 2002.


M.-C. Jin and Z. Chen, “An alpha-alumina absolute humidity sensor for moisture analysis,” Chinese Patent No. 91107172.5, 1991.