function ids = nmos(vds,vgs,KP,W,L,vto)

%  This function generates the drain-source current values "ids" for
%  and NMOS Transistor as a function of the drain-source voltage "vds".
%
%    ids = nmos(vds,vgs,KP,W,L,vto)
%
%    where "vds" is a vector of drain-source values
%                "vgs" is the gate voltage
%                "KP" is the device parameter
%                "W" is the channel width
%                "L" is the channel length
%                "vto" is the threshold voltage
%   and output "ids" is a vector of the same size of "vds"
%   containing the drain-source current values.

ids = zeros(size(vds));  %  Initialize output array with all zeros

k = (W/L)*KP/2;   %  Combine devices material parameters

%  For non-cutoff operation:    
if vgs >= vto
        %  Find points in vds that are in the triode region
        ktri = find(vds<=(vgs-vto) & vds >= 0);  %  Only take point up to the gate voltage minus the threshold.
        %  If points are found in the triode region compute ids with proper formula 
        if ~isempty(ktri)
            ids(ktri) = k*(2*(vgs-vto).*vds(ktri)-vds(ktri).^2);
        end
        % Find points in staturation region
        ksat = find(vds>(vgs-vto) & vds >= 0);   %  Take points greater than the excess voltage
        %  if points are found in the saturation regions compute ids with proper formula 
        if ~isempty(ksat)
            ids(ksat) = k*((vgs-vto).^2);
        end
    %  If points of vds are outside these ranges then the ids values remain zero
end