Dr. Zhi Chen's Group
 Home| Research| Publication| Vita| Opening| Lab| Group Member|  Teaching

Research  Projects

NANO-SCALE GATE INSULATORS FOR MOS DEVICES

Research Update

New Effect: 100-100,000 Times Reduction of Gate Leakage Current of Silicon Oxide/Oxynitride
We found
a new effect, phonon-energy coupling enhancement (PECE)—an increase in bond energy coupling through the manipulation of silicon, oxygen, and deuterium vibrational modes undergoing rapid thermal process (RTP), so that Si-O and Si-D bonds become more robust. This results in dramatical reduction of gate leakage current of silicon oxides and oxynitrides by 2-5orders of magnitude. This will allow chip producers to develop faster chips with reduced power consumption. (See Press Releases:  University of Kentucky Press Release, Science Daily, AAAS EurekAlert, Semiconductor International Column News.) It became the top 14 news in 2005 after released in Dec 2005 for less than one month (See Top 10 2005 press releases on EurekAlert)!

NANO STRUCTURE MATERIALS

2-D Anodic Aluminum Oxide (AAO) Array Nanostructures


1-D Anodic Aluminum Oxide (AAO) Array Nanostructures



 

INTEGRATED SENSORS

Carbon nanotube-based gas sensors

Hydrogen sensors