Detailed View
of a MOSFET and the Si/SiO2 Interface
In order
to measure the interface trap density and other
hot-carrier degradation parameters, we need
to characterize the devices.
Detailed View
of a MOSFET and the Si/SiO2 Interface
In order
to measure the interface trap density and other
hot-carrier degradation parameters, we need
to characterize the devices.