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Nanoscale Electronic Devices and Materials
Exploring Future Electron Devices for VLSI ApplicationsWelcome to visit my group home page! It is a rewarding career in my research group. My research focuses on studies of gate insulators for advanced MOS transistors, fabrication and characterization of nano-devices and sensors using novel nano-materials. The graduates in my research area are highly demanded in industry. I always need outstanding people! Please feel free to send me your resume.
Dr. Chen's Research AccomplishmentGoogle Scholar Citation: http://scholar.google.com/citations?user=lW-EfMYAAAAJ&hl=en&oi=ao
Hydgogen/Deuterium (H/D) Isotope Effect. This effect was discovered in 1996 by Drs. Lyding and Hess at University of Illinois at Urbana-Champaign (UIUC). As a graduate student at UIUC, Dr. Chen helped develop this effect into a manufacturing process, so that integrated circuits (microchips) lifetime is dramatically improved (IEEE Electron. Dev. Lett., vol. 19, pp. 444-446, 1998；IEEE Electron. Dev. Lett., vol. 21, no. 5, 221-223, 2000). In addition, the classical theory suggested that the hot-electron degradation of MOS transistors was caused by hot electron injection into the gate insulator (SiO2). Based on his experiments using H/D isotope effect, Dr. Chen proved that it is not the hot-electron injection into the oxide but the hot-electron bombarding the SiO2/Si interface that causes the degradation, (“On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing”, IEEE Electron. Dev. Lett., vol. 21, no. 1, 24-26, 2000). This laid a foundation for establishing a more accurate theoretical lifetime model for microchips, which is very important for the reliability of computers, cell phones, and iPods/iPads etc.
TiO2 Nanotubes and Carbon Nanotubes. Dr. Chen had extensive experience in anodization of aluminum when he worked on humidity sensors from 1988 to 1992. In 2001, based on his experience in anodization, working with Dr. D. W. Gong, his postdoctoral research associate, and Prof. C. A. Grimes who was then at
Drift-free moisture sensor. Working with his colleagues at University of Electronic Science & Technology, Chengdu, China, Dr. Chen developed the world’s first reliable and drift-free humidity/moisture sensor for trace moisture measurement (<1 ppmv) using anodization (J. Am. Ceram. Soc., vol. 74, pp. 1325-1330, 1991, and Proc. 27th annual conference, IEEE Industry Application Soc., Houston, TX, Oct. 1992, vol. 2, pp1668-1675). He won two awards for this contribution: The Second Prize Paper Award, Industrial Automation and Control Committee, the 27th Annual Conference, IEEE Industry Application Society, USA, 1992 and The National Award for Invention: The Third Prize Award, Ministry of Science & Technology, China, 1995. His recent technical review about this drift-free moisture sensor and other humidity sensors has made a large impact on humidity sensor research (“Humidity sensors: a review of materials and mechanisms”, Sensor Letters vol. 3, 274-295, 2005，Citation: >300 on Google).