Micro and Nano
Devices and
Materials
Exploring for Future
Electron Devices for VLSI
Applications
Welcome to visit my group home page! It is a
rewarding career
in my research group. My research focuses on deep submicron MOS device
reliability and modeling, fabrication and characterization of novel
semiconductor
devices, e.g. single-wall carbon nanotubes --- an emerging
semiconductor,
and novel nano-materials and nano-devices. The graduates in my research
area are highly demanded in semiconductor industry. The survey (EE
Times,
Oct. 30, 2000) shows engineers in deep submicron IC devices have the
highest
pay
in EE. I always need outstanding people! Please feel free to send me
your
resume.
BREAKING
RESEARCH NEWS
New
Effect:
100-100,000 Times Reduction of Gate Leakage Current of Silicon
Oxide/Oxynitride
We discovered and harnessed a new physics effect, phonon-energy
coupling enhancement (PECE)—an
increase in bond energy coupling through the manipulation of silicon,
oxygen, and deuterium vibrational modes undergoing rapid thermal
process (RTP) and deuterium anneal, so that Si-O and Si-D bonds become
more robust. This results in dramatical reduction of gate leakage
current of silicon oxides and oxynitrides by 2-5orders
of magnitude. This will allow chip producers to
develop faster chips with
reduced power consumption.
University
of Kentucky Press Release, Semiconductor
International Column News
For details, click the
following link:
Relavent
Publications and Recipes
|
