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EE 562
Design Project Description Modifications

 

New Guidelines for Design Project Simulation:

I have discovered that there is a conflict between the models used in B2Spice and the transistor parameters I have given you to use in the design project. Although this conflict has not been a problem in homework, as your circuits become more complex the conflict will start to cause problems.

To solve this problem I would like to to use the model parameters listed below for nMOS and pMOS transistors respectively. Notice:
1) these are level 2 parameters and you should use level 2 to avoid conflicts
2) the values for all parameters are the same as previously given (thus, no need to alter calculations)
3) many of the parameters have been removed (because they only apply to Level 3 models).

If you use this shorter set of parameters and use level 2, everything should work out fine. I have tested a differential amplifier and a cascode amp and everything seems fine.   

NEW MODEL PARAMETERS to be attached to the transistors in your circuit file(s).

.model cmosn nmos level = 2 vto = 0.5940 kp = 7.9174e-05 gamma = 0.6546 phi = 0.700000 pb = 9.8338e-01 cgso = 1.8679e-10 cgdo = 1.8679e-10 cgbo = 4.3907e-10 cj = 2.8446e-04 mj = 5.2989e-01  cjsw = 1.4208e-10 mjsw = 1.0000e-01 tox = 2.9200e-08 ld = 1.0530e-07 nsub = 1.8050e+16 xj = 0.200000u

.model cmosp pmos level = 2 vto = -0.8135 kp = 2.1464e-05 gamma = 0.3250 phi = 0.700000 pb = 7.6778e-01 cgso = 5.0000e-11 cgdo = 5.0000e-11 cgbo = 4.0071e-10 cj = 3.0160e-04 mj = 4.4794e-01 cjsw = 1.8785e-10 mjsw = 1.0476e-01 tox = 2.9200e-08 ld = 1.1100e-09 nsub = 4.4510e+15 xj = 0.200000u

 Let me know if you have any questions or are still having trouble with simulation after switching to level 2.

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