Plasma Enhanced Chemical Vapor Deposition

(PECVD)

The PECVD is located in room 369 of the ASTeCCbuilding. Chemical vapor deposition is used to chemically deposit layers of a desired material onto asubstrate. The substrate is exposed to volatile precursors which chemically react and/or decompose on the substrate's surface. In this system a plasma is used to enhance the chemical reaction rates of the precursors.

 

Benefits:

  1. Low process temperatures.
  2. Flexible film properties.
  3. Versatile- can deposit virtually any element or compound.
  4. High purity.

"Plasma-enhanced chemical vapor deposition." Wikipedia, The Free Encyclopedia. 24 Dec 2007, 20:56 UTC. Wikimedia Foundation, Inc. 24 Jan 2008 <http://en.wikipedia.org/w/index.php?title=Plasma-enhanced_chemical_vapor_deposition&oldid=180013810>.