Atomic Layer Deposition



Our ALD system is located in room 369 of the ASTeCC building. CeNSE provides the precursor for Al2O3 deposition. Please contact Brian or Chuck for help obtaining others.



More Information

A very good tutorial from Cambridge Nanotech is available here.

ALD is a self-limiting, sequential surface chemistry that deposits conformal thin-films of materials onto substrates of varying compositions. ALD is similar in chemistry to chemical vapor deposition (CVD), except that the ALD reaction breaks the CVD reaction into two half-reactions, keeping the precursor materials separate during the reaction. ALD film growth is self-limited and based on surface reactions, which makes achieving atomic scale deposition control possible. By keeping the precursors separate throughout the coating process, atomic layer control of film grown can be obtained as fine as ~ 0.1 angstroms per monolayer.

ALD has unique advantages over other thin film deposition techniques, as ALD grown films are conformal, pin-hole free, and chemically bonded to the substrate. With ALD it is possible to deposit coatings perfectly uniform in thickness inside deep trenches, porous media and around particles. The film thickness range is usually 1-500 nm. ALD can be used to deposit several types of thin films, including various ceramics, from conductors to insulators.

"Atomic Layer Deposition." Wikipedia, The Free Encyclopedia. 29 Nov 2007, 15:04 UTC. Wikimedia Foundation, Inc. 24 Jan 2008 <>.

Special Thanks

Thanks to Cambridge Nanotech who graciously gave permission to use thier animation and tutorial. Please visit them at