Zhi David Chen , Ph.D.

Chen-Zhi
Curriculum Vitae Research Site

KU Professor of Electrical Engineering

Research Areas: , , ,

University of Kentucky, College of Engineering
Electrical Engineering - ECE
374 ASTeCC
Lexington, KY 40506-0286
Phone: 859-218-6550
Fax: 859-257-3092
Email: zhichen@engr.uky.edu

Professional Preparation

University of Electronic Science & Technology (China)      Electrical Engineering                B.S.      1984    

University of Electronic Science & Technology (China)      Electrical Engineering                M.S.     1987

University of Illinois at Urbana-Champaign                        Electrical Engineering                Ph.D.    1999

Appointments

2009 – Present       Professor of Electrical Engineering, University of Kentucky, Lexington, KY

2007 – Present       KU Professor of Electrical Engineering, University of Kentucky, Lexington, KY

2004 – Present       Associate Professor, Electrical Engineering, University of Kentucky, Lexington, KY

2001 – Present       Associate Director of Center for Nanoscale Science & Engineering, University of

                             Kentucky, Lexington, KY

1999 – 2004            Assistant Professor, Electrical Engineering, University of Kentucky, Lexington, KY

1998                      Member of Technical Staff, Bell Laboratories, Lucent Technologies, Orlando, FL

1994 – 1999            Research Assistant, University of Illinois/Urbana-Champaign, Urbana, IL

1993                      Teaching and Research Assistant, Southern Illinois University at Carbondale

1987 – 1992            Instructor/Lecturer, University of Electronic Science and Technology (China)

Publications

  1. Z. Chen, P.-L. Ong, and Y. Wang, “Reliable Observation of Large Leakage-Current Reduction of Thin SiO2 Induced by Phonon-Energy-Coupling Enhancement: Problems and Solution,” J. Electrochem. Soc. 157, G44-G48 (2010).
  2. P. L. Ong, Z. Chen, A. Haggag, and T.-Y. Luo, “Large Leakage-Current Reduction of Ultrathin Industrial SiON Wafers Induced by Phonon-Energy-Coupling Enhancement,” Electrochem. Solid-State Lett., vol. 11, no. 11, H293-H295  (2008).
  3. P. L. Ong and Z. Chen, “Evidence of enhanced phonon-energy coupling in SiO2/Si,” Appl. Phys. Lett. 90, 113516 (2007).
  4. Z. Chen, J. Guo, and F. Yang, “Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO2/Si system,” Appl. Phys. Lett. vol. 88, no. 8, 082905, 2006.
  5. C. B. Samantaray and Z. Chen, “Reduction of Gate Leakage Current of HfSiON Dielectrics through Enhanced Phonon-Energy Coupling,” Appl. Phys. Lett., vol. 89, 162903 (2006).
  6. Z. Chen, J. Guo, and P. Ong, “Evidence for Energy Coupling from the Si-D Vibration Mode to the Si-Si and Si-O vibration Modes at the SiO2/Si Interface”, Appl. Phys. Lett., 83, 2150-2152 (2003).
  7. C. Lu, Z. Chen, and V. Singh, “Highly hydrogen-sensitive SnO2 nanoscale-particle films with platinum electrodes,” Sensors and Actuators B 146, 145-153 (2010).
  8. 4.     Chi Lu and Zhi Chen, “High-Temperature Resistive Hydrogen Sensor Based on Thin Nanoporous Rutile TiO2 Film on Anodic Aluminum Oxide,” Sensors and Actuators B 140, 109–115 (2009).
  9. H. G. Zhang and Z. Chen, “A Horizontally Aligned One-Dimensional Carbon Nanotube Array on a Si Substrate,” J. Electrochem. Soc., vol. 154, H124-H126 (2007).
  10. D. W. Gong, C. A. Grimes, R. S. Singh, O. K. Varghese, Z. Chen, W. C. Hu  and E. C. Dickey, “Titanium Oxide Nanotube Arrays Prepared By Anodic Oxidation,” J. Mater. Res. vol. 16, pp. 3331-3334 (2001).