Matthew J. Beck, Ph.D.

Assistant Professor

Research Areas: Computational Materials Science of Nanomaterials and Materials for Energy, Application of Novel Quantum Mechanical Methods to Diffusion, Electron Transport and Catalysis

University of Kentucky, College of Engineering
Chemical and Materials Engineering - CME
157 FPAT
Lexington, KY 40506-0046
Phone: 859-257-0039
Fax: 859-323-1929
Email: beck@engr.uky.edu


Professional Preparation

University of Michigan, B.S.E Materials Science & Engineering, 2000
Northwestern University, Ph.D. Materials Science & Engineering, 2005
Vanderbilt University, Post‐Doc Materials Physics, 2005‐2008

Appointments

University of Kentucky, Lexington, KY
2009‐Present Assistant Professor, Chemical and Materials Engineering Department

Vanderbilt University, Nashville, TN
2008‐2009 Research Assistant Professor, Department of Physics and Astronomy
2005‐2008 Research Associate, Department of Physics and Astronomy

5 Most Recent Publications

  • G. Chen, B. Sanduijav, D. Matei, G. Springholz, D. Scopece, M. J. Beck, F. Montalenti, and L. Miglio,
    “Formation of Ge nanoripples on vicinal Si (1 1 10): From Stranski‐Krastanow seeds to a
    perfectly faceted wetting layer,” Phys. Rev. Lett., in press (2012).

  • Y. S. Puzyrev, T. Roy, M. J. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides,
    “Dehydrogenation of defects and hot‐electron degradation in GaN high‐electron‐mobility
    transistors,” J.Appl. Phys., v. 109, art. no. 034501 (2011).

  • N. Jiang, Y. Y. Zhang, Q. Liu, Z. H. Cheng, Z. T. Deng, S. X. Du, H.‐J. Gao, M. J. Beck and S. T. Pantelides.
    “Diffusivity control in molecule‐on‐metal systems using electric fields”, Nano Lett., v. 10, pp.
    1184‐1188 (2010).

  • T. J. Pennycook, M. J. Beck, K. Varga, M. Varela, S. J. Pennycook and S. T. Pantelides, “Origin of
    colossal ionic conductivity in oxide multilayers: Interface induced sublattice disorder”, Phys.
    Rev. Lett., v. 104, art. no. 115901 (2010).

  • M. J. Beck, Y. S. Puzyrev, N. Sergueev, K. Varga, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides,
    “The Role of Atomic Displacements in Ion‐Induced Dielectric Breakdown,” IEEE Trans.Nuc. Sci.,
    v. 56, pp. 3210‐3217 (2009).

5 Other Publications

  • M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, T. Fromherz,
    F. Schaffler, L. Miglio, G. Bauer. “Key role of the wetting layer in revealing the hidden path of
    Ge/Si(001) Stranski‐Krastanow growth onset”, Phys.Rev.B, v. 80, art. no. 205321 (2009).

  • M. J. Beck, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides. “Disorder‐recrystallization effects in
    low‐energy beam‐solid interactions”, Phys. Rev. Lett., v. 100, art. no. 185502 (2008).

  • M. J. Beck, L. Tsetseris and S. T. Pantelides. “Stability and dynamics of Frenkel pairs in Silicon”, Phys.
    Rev. Lett., v. 99, art. no. 215503 (2007).

  • O. E. Shklyaev, M. J. Beck, M. Asta, M. J. Miksis and P. W. Voorhees. “Role of strain‐dependent surface
    energies in Ge/Si (100) island formation”, Phys. Rev. Lett., v. 94, art. no. 176102 (2005).

  • M. J. Beck, A. van de Walle and M. Asta. “Surface energetics and structure of the Ge wetting layer on
    Si (100)”, Phys.Rev.B, v. 70, art. no. 205337 (2004).