Matthew J. Beck, Ph.D.

beck_full
Curriculum Vitae

Research Group

Assistant Professor

Research Areas: Computational Materials Science of Nanomaterials and Materials for Energy, Application of Novel Quantum Mechanical Methods to Diffusion, Electron Transport and Catalysis

University of Kentucky, College of Engineering
Chemical and Materials Engineering - CME
157 FPAT
Lexington, KY 40506-0046
Phone: 859-257-0039
Fax: 859-323-1929
Email: beck@engr.uky.edu

Professional Preparation

University of Michigan, B.S.E Materials Science & Engineering, 2000
Northwestern University, Ph.D. Materials Science & Engineering, 2005
Vanderbilt University, Post‐Doc Materials Physics, 2005‐2008

Appointments

University of Kentucky, Lexington, KY
2009‐Present Assistant Professor, Chemical and Materials Engineering Department

Vanderbilt University, Nashville, TN
2008‐2009 Research Assistant Professor, Department of Physics and Astronomy
2005‐2008 Research Associate, Department of Physics and Astronomy

5 Most Recent Publications

  • N. Jiang, Y. Y. Zhang, Q. Liu, Z. H. Cheng, Z. T. Deng, S. X. Du, H.‐J. Gao, M. J. Beck and S. T. Pantelides.
    “Diffusivity control in molecule‐on‐metal systems using electric fields”, Nano Lett. 10, 1184‐
    1188 (2010).
  • T. J. Pennycook, M. J. Beck, K. Varga, M. Varela, S. J. Pennycook, and S. T. Pantelides, “Origin of
    colossal ionic conductivity in oxide multilayers: Interface induced sublattice disorder”, Phys.
    Rev. Lett. 104, 115901 (2010).
  • M. J. Beck, Y. S. Puzyrev, N. Sergueev, K. Varga, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides,
    “The Role of Atomic Displacements in Ion‐Induced Dielectric Breakdown”, IEEE Trans. Nuc.
    Sci. 56, 3210‐3217 (2009).
  • M. Brehm, F. Montalenti, M. Grydlik, G. Vastola, H. Lichtenberger, N. Hrauda, M. J. Beck, et al. “Key
    role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski‐Krastanow
    growth onset”, Phys. Rev. B 80, 205321 (2009).
  • M. J. Beck and S. T. Pantelides. “Origin of preferential sputtering in a‐SiO2 during ion beam
    synthesis of nanocrystals”, Phys. Rev. B 79, 033203 (2009).

5 Other Publications

  • M. J. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides. “Atomic Displacement
    effects in Single‐event Gate Rupture”, IEEE Trans. Nuc. Sci. 55, 3025‐3031 (2008).
  • M. J. Beck, R. D. Schrimpf, D. M. Fleetwood and S. T. Pantelides. “Disorder‐recrystallization effects in
    low‐energy beam‐solid interactions”, Phys. Rev. Lett. 100, 185502 (2008).
  • R. Hatcher, M. J. Beck, A. Tackett and S. T. Pantelides. “Dynamical effects in the interaction of ion
    beams with solids”, Phys. Rev. Lett. 100, art. no. 103201 (2008).
  • M. J. Beck, L. Tsetseris and S. T. Pantelides. “Stability and dynamics of Frenkel pairs in Silicon”, Phys.
    Rev. Lett. 99, 215503 (2007).
  • M. J. Beck, A. van de Walle, and M. Asta. “Surface energetics and structure of the Ge wetting layer on
    Si (100)”, Phys. Rev. B 70, 205337 (2004).